NARROW-STRIPE INJECTION-LASERS IN GAINASP-INP

被引：12

作者：

RENNER, D

HENSHALL, G

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 202

页数：4

共 14 条

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CAMMACK, DA ;

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[3] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].

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[5]

EPWORTH RE, 1979, MAR P FIBR OPT C WAS

[6]

GOODWIN AR, 1979, SEP P OPT COMM C AMS

[7] GROWTH AND CHARACTERISTICS OF GALN ASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

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HENSHALL, GD .

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (06) :174-178

[8] PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS [J].

KIRKBY, PA ;

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4567-4579

[9]

KIRKBY PA, 1980, MICROELECTRON RELIAB, V19, P633

[10] LASING CHARACTERISTICS OF VERY NARROW PLANAR STRIPE LASERS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :601-607

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