COMPETITION BETWEEN J=1 AND J=2 EXCITON RADIATIVE TRANSITION IN THE LOW-TEMPERATURE RANGE IN N DOPED GAP AND (GA,IN)P

被引：3

作者：

CHANG, H

HIRLIMANN, C

KANEHISA, M

BALKANSKI, M

机构：

来源：

JOURNAL OF LUMINESCENCE | 1981年 / 24-5卷 / NOV期

关键词：

D O I：

10.1016/0022-2313(81)90297-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：397 / 400

页数：4

相关论文

共 6 条

[1] CHANG H, 1981, RECENT DEV CONDENSED, V3, P205
[2] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
CUTHBERT, JD
THOMAS, DG
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
[3] ISOELECTRONIC DONORS AND ACCEPTORS
HOPFIELD, JJ
THOMAS, DG
LYNCH, RT
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &
[4] LUMINESCENCE AND DIRECT EXPERIMENTAL-OBSERVATIONS OF BAND-STRUCTURE EFFECTS IN NITROGEN-DOPED GAXIN1-XP ALLOYS
MARIETTE, H
CHEVALLIER, J
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1200 - 1205
[5] MARIETTE H, 1981, THESIS PARIS
[6] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
THOMAS, DG
HOPFIELD, JJ
FROSCH, CJ
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &