MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES

被引：37

作者：

ARIAS, JM

ZANDIAN, M

BAJAJ, J

PASKO, JG

BUBULAC, LO

SHIN, SH

DEWAMES, RE

机构：

[1] Rockwell Science Center, Thousand Oaks, 91360, CA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 05期

关键词：

DEFECTS; HGCDTE; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY (MBE);

D O I：

10.1007/BF02657957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out a study and identified that MBE HgCdTe growth-induced void defects are detrimental to long wavelength infrared photodiode performance. These defects were induced during nucleation by having surface growth conditions deficient in Hg. Precise control and reproducibility of the CdZnTe surface temperature and beam lures are required to minimize such defects. Device quality material with void defect concentration values in the low 10(2) cm(-2) range were demonstrated.

引用

页码：521 / 524

页数：4

共 8 条

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