共 22 条
[1]
AMEURLAIRE JF, 1974, Patent No. 3845494
[2]
DISLOCATION DENSITY REDUCTION BY THERMAL ANNEALING OF HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (03)
:1646-1650
[3]
CAPPER P, 1991, J VAC SCI TECHNOL B, V9, P166
[4]
COCKRUM CA, COMMUNICATION
[5]
HASHINOTO A, 1991, JPN J APPL PHYS, V30, pL477
[6]
STANDARD RELATIONSHIPS IN THE PROPERTIES OF HG1-XCDXTE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (02)
:271-275
[7]
EFFECT OF DISLOCATIONS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF LONG-WAVELENGTH INFRARED HGCDTE PHOTOVOLTAIC DETECTORS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1992, 10 (04)
:1499-1506
[9]
LOW-TEMPERATURE GROWTH OF MIDWAVELENGTH INFRARED LIQUID-PHASE EPITAXY HGCDTE ON SAPPHIRE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (03)
:1661-1666
[10]
MAILLE JHP, 1979, Patent No. 4132999