KEY ISSUES IN HGCDTE-BASED FOCAL PLANE ARRAYS - AN INDUSTRY PERSPECTIVE

被引:89
作者
TENNANT, WE
COCKRUM, CA
GILPIN, JB
KINCH, MA
REINE, MB
RUTH, RP
机构
[1] SANTA BARBARA RES CTR,GOLETA,CA 93117
[2] ROCKWELL INT CORP,CTR ELECTROOPT,ANAHEIM,CA 92803
[3] TEXAS INSTRUMENTS INC,DALLAS,TX 75265
[4] LORAL INFRARED & IMAGING SYST,LEXINGTON,MA 02173
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.585869
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Technological limits, not fundamental issues, are all that keep HgCdTe from completely dominating almost all infrared (IR) applications. The technological limits result from our incomplete understanding of HgCdTe materials science. This article's snapshot view, from the unique perspective of the major United States HgCdTe IR detector array companies, suggests directions that HgCdTe detector technology should take as we approach the next century. We argue that the Government, industrial users, and industrial producers of HgCdTe must support continuing scientific investigation of this material to parallel the manufacturing of second generation HgCdTe-based systems. Without this manufacturing science base, systems will develop too slowly, cost too much, and fail too often. To assist developing this critically important technology, the article highlights some of the more vexing and as yet unsolved HgCdTe materials science and engineering problems that we see as being important.
引用
收藏
页码:1359 / 1369
页数:11
相关论文
共 22 条
[1]  
AMEURLAIRE JF, 1974, Patent No. 3845494
[2]   DISLOCATION DENSITY REDUCTION BY THERMAL ANNEALING OF HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J].
ARIAS, JM ;
ZANDIAN, M ;
SHIN, SH ;
MCLEVIGE, WV ;
PASKO, JG ;
DEWAMES, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1646-1650
[3]  
CAPPER P, 1991, J VAC SCI TECHNOL B, V9, P166
[4]  
COCKRUM CA, COMMUNICATION
[5]  
HASHINOTO A, 1991, JPN J APPL PHYS, V30, pL477
[6]   STANDARD RELATIONSHIPS IN THE PROPERTIES OF HG1-XCDXTE [J].
HIGGINS, WM ;
PULTZ, GN ;
ROY, RG ;
LANCASTER, RA ;
SCHMIT, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :271-275
[7]   EFFECT OF DISLOCATIONS ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF LONG-WAVELENGTH INFRARED HGCDTE PHOTOVOLTAIC DETECTORS [J].
JOHNSON, SM ;
RHIGER, DR ;
ROSBECK, JP ;
PETERSON, JM ;
TAYLOR, SM ;
BOYD, ME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1499-1506
[8]   HGCDTE 128X128 INFRARED FOCAL PLANE ARRAYS ON ALTERNATIVE SUBSTRATES OF CDZNTE/GAAS/SI [J].
JOHNSON, SM ;
KALISHER, MH ;
AHLGREN, WL ;
JAMES, JB ;
COCKRUM, CA .
APPLIED PHYSICS LETTERS, 1990, 56 (10) :946-948
[9]   LOW-TEMPERATURE GROWTH OF MIDWAVELENGTH INFRARED LIQUID-PHASE EPITAXY HGCDTE ON SAPPHIRE [J].
JOHNSTON, S ;
BLAZEJEWSKI, ER ;
BAJAJ, J ;
CHEN, JS ;
BUBULAC, L ;
WILLIAMS, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1661-1666
[10]  
MAILLE JHP, 1979, Patent No. 4132999