STABILITY OF ALAS IN ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES

被引：41

作者：

DALLESASSE, JM

GAVRILOVIC, P

HOLONYAK, N

KALISKI, RW

NAM, DW

VESELY, EJ

BURNHAM, RD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] AMOCO TECHNOL CO,AMOCO RES CTR,NAPERVILLE,IL 60566

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期

关键词：

D O I：

10.1063/1.102902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the long-term (≳8 yr) degradation of Al xGa1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs "buried" layers (confining layers) is found to be much less stable than material containing thinner (≲200 Å) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.

引用

页码：2436 / 2438

页数：3

共 7 条

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