ION-IMPLANTED, OUTDIFFUSION PRODUCED DIAMOND THIN-FILMS

被引：13

作者：

HOFF, HA ^{[1
]}

VESTYCK, DJ ^{[1
]}

BUTLER, JE ^{[1
]}

PRINS, JF ^{[1
]}

机构：

[1] UNIV WITWATERSRAND,JOHANNESBURG 2001,SOUTH AFRICA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.108810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thin film, produced by carbon ion implantation and outdiffusion at the temperature of irradiation, has been confirmed to be diamond using micro-Raman spectroscopy and electron diffraction. The Raman spectra contained a definitive diamond peak shifted slightly from that of natural diamond. This shift may be due to residual strain and is consistent with the broad linewidth. Fragments of the film over a micron in size were examined with transmission electron microscopy and found to be untwinned, single crystals. The film had been produced on a polycrystalline copper substrate. The carbon ions were at an ion energy of 120 keV and the irradiation was carried out to a high dose.

引用

页码：34 / 36

页数：3

共 8 条

[1] STRUCTURE OF AUTOEPITAXIAL DIAMOND FILMS [J].