HETEROEPITAXY OF CARBON ON COPPER BY HIGH-TEMPERATURE ION-IMPLANTATION

被引：44

作者：

LEE, ST ^{[1
]}

CHEN, S ^{[1
]}

BRAUNSTEIN, G ^{[1
]}

FENG, X ^{[1
]}

BELLO, I ^{[1
]}

LAU, WM ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO, LONDON N6A 5B7, ONTARIO, CANADA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recently reported carbon-ion-implantation-outdiffusion method [J. F. Prins and H. L. Gaigher, Mater. Res. Soc. Sym. Proc. (to be published, 1991)] of growing epitaxial diamond layers on copper was carefully examined. X-ray diffraction, Raman scattering, and transmission electron diffraction characterization of films prepared by implanting 200 keV carbon ions into (100), (110), (111), and (210) copper, held at temperatures of 850-1000-degrees-C, showed that the films were invariably highly oriented crystalline graphite. No evidence has been found to support the claim that diamond was formed by this implantation-outdiffusion method.

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页码：785 / 787

页数：3

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