RAMAN, TRANSMISSION ELECTRON-MICROSCOPY, AND CONDUCTIVITY MEASUREMENTS IN MOLECULAR-BEAM DEPOSITED MICROCRYSTALLINE SI AND GE - A COMPARATIVE-STUDY

被引：103

作者：

GONZALEZHERNANDEZ, J

AZARBAYEJANI, GH

TSU, R

POLLAK, FH

机构：

[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[2] INST FIS & QUIM SAO CARLOS,BR-13560 SAO CARLOS,BRAZIL

[3] CUNY,CTR UNIV,NEW YORK,NY 10036

[4] CUNY,GRAD SCH,DEPT PHYS,NEW YORK,NY 10036

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1350 / 1352

页数：3

共 12 条

[1] STRUCTURE CHANGE AND RESISTIVITY STEP OF EVAPORATED GE FILMS IN DEPENDENCE ON SUBSTRATE TEMPERATURE
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KESSLER, FR
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01): : 61 - 68
[2] Hayes W., 1978, SCATTERING LIGHT CRY
[3] GLOW-DISCHARGE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
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OSADA, Y
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OMATA, S
AIHARA, K
NAKAGIRI, T
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 701 - 703
[4] KITTEL C, 1976, INTRO SOLID STATE PH, P171
[5] LIGHT-SCATTERING STUDY OF BORON-NITRIDE MICRO-CRYSTALS
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[J]. PHYSICAL REVIEW B, 1981, 23 (12) : 6348 - 6356
[6] RAMAN-SCATTERING IN ALLOY SEMICONDUCTORS - SPATIAL CORRELATION MODEL
PARAYANTHAL, P
POLLAK, FH
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (20) : 1822 - 1825
[7] THE ONE PHONON RAMAN-SPECTRUM IN MICROCRYSTALLINE SILICON
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WANG, ZP
LEY, L
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (05) : 625 - 629
[8] RAMAN-STUDY OF POLISH-INDUCED SURFACE STRAIN IN [100] GAAS AND INP
SHEN, H
POLLAK, FH
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 692 - 694
[9] EFFECTS OF AS+ ION-IMPLANTATION ON THE RAMAN-SPECTRA OF GAAS - SPATIAL CORRELATION INTERPRETATION
TIONG, KK
AMIRTHARAJ, PM
POLLAK, FH
ASPNES, DE
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 122 - 124
[10] THIN-FILM TRANSISTORS FABRICATED IN SOLID-PHASE-RECRYSTALLIZED SI FILMS ON FUSED-SILICA SUBSTRATES
TSAUR, BY
FAN, JCC
TURNER, GW
GEIS, MW
SILVERSMITH, DJ
MOUNTAIN, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1151 - 1153

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