EFFECTS OF AS+ ION-IMPLANTATION ON THE RAMAN-SPECTRA OF GAAS - SPATIAL CORRELATION INTERPRETATION

被引：389

作者：

TIONG, KK ^{[1
]}

AMIRTHARAJ, PM ^{[1
]}

POLLAK, FH ^{[1
]}

ASPNES, DE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：122 / 124

页数：3

共 20 条

[1] EFFECTS OF IMPLANTATION AND ANNEALING ON THE RAMAN-SPECTRUM OF INP AND GAAS [J].

ABELS, LL ;

SUNDARAM, S ;

SCHMIDT, RL ;

COMAS, J .

APPLIED SURFACE SCIENCE, 1981, 9 (1-4) :2-13

[2] DIRECT DETERMINATION OF SIZES OF EXCITATIONS FROM OPTICAL MEASUREMENTS ON ION-IMPLANTED GAAS [J].

ASPNES, DE ;

KELSO, SM ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW LETTERS, 1982, 48 (26) :1863-1866

[3]

Hayes W., 1978, SCATTERING LIGHT CRY

[4] INFRARED REFLECTION AND RAMAN-SCATTERING OF ION-IMPLANTED NITROGEN IN GALLIUM-PHOSPHIDE [J].

KACHARE, AH ;

CHERLOW, JM ;

YANG, TT ;

SPITZER, WG ;

EULER, FK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) :161-173

[5]

MEYERS DR, 1983, J APPL PHYS, V54, P5032

[6] OPTICAL TECHNIQUES FOR IMPLANT PROCESS DIAGNOSIS IN GAP [J].

MYERS, DR ;

GOURLEY, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) :217-220

[7]

MYERS DR, 1982, 10TH INT S GAAS REL

[8]

MYERS DR, 1982, P MRS S DEFECTS SEMI

[9]

NAKAMURA T, 1982, J APPL PHYS, V8, P5870

[10] RAMAN SCATTERING OF ION-IMPLANTED GAAS [J].

PEERCY, PS .

APPLIED PHYSICS LETTERS, 1971, 18 (12) :574-&

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