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EFFECT OF UNIAXIAL STRESS AND DOPING ON ONE-PHONON RAMAN-SPECTRUM OF GAP
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PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1974, 61 (01)
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EFFECT OF CARRIER CONCENTRATION ON RAMAN FREQUENCIES OF SI AND GE
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PHYSICAL REVIEW B,
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THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS
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1981, 182 (APR)
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OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING
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1974, 9 (04)
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POST-IMPLANT METHODS FOR CHARACTERIZING THE DOPING UNIFORMITY AND DOSE ACCURACY OF ION-IMPLANTATION EQUIPMENT
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