STRUCTURE CHANGE AND RESISTIVITY STEP OF EVAPORATED GE FILMS IN DEPENDENCE ON SUBSTRATE TEMPERATURE

被引：14

作者：

GOEBEL, H ^{[1
]}

DETTMER, K ^{[1
]}

KESSLER, FR ^{[1
]}

机构：

[1] TECH UNIV BRUNSWICK,INST PHYS B,BRUNSWICK,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1002/pssa.2210160105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：61 / 68

页数：8

相关论文

共 31 条

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS
ADAMSKY, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &
[2] CONDUCTION IN THIN SEMICONDUCTOR FILMS
ANDERSON, JC
[J]. ADVANCES IN PHYSICS, 1970, 19 (79) : 311 - &
[3] SOLID AMORPHOUS GE AND AS AS EXAMPLES OF LATTICE-LIKE AMORPHOUS SUBSTANCES
BREITLING, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 628 - +
[4] STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS
CHOPRA, KL
BAHL, SK
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2545 - &
[5] ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM
CLARK, AH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 750 - &
[6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[7] TEXTURAL PROPERTIES OF GERMANIUM FILMS
DAVEY, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 877 - &
[8] ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GAAS UP TO THICKNESS OF 106 A - (DEPOSITION AT 475 AND 500 DEGREEES C RELATION OF CARRIER CONCENTRATION TO THICKNESS E)
DAVEY, JE
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (07) : 164 - &
[9] EPITAXY OF GERMANIUM FILMS ON GERMANIUM BY VACUUM EVAPORATION
DAVEY, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) : 1015 - &
[10] DETTMER K, 1972, PHYS VERH DPG, V6, P518

← 1 2 3 4 →