ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GAAS UP TO THICKNESS OF 106 A - (DEPOSITION AT 475 AND 500 DEGREEES C RELATION OF CARRIER CONCENTRATION TO THICKNESS E)

被引：28

作者：

DAVEY, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 07期

关键词：

D O I：

10.1063/1.1754536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：164 / &

相关论文

共 14 条

[1] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4, P199
[2] SOURCE OF ACCEPTORS IN LOW RESISTIVITY VACUUM-DEPOSITED GERMANIUM FILMS
BYLANLER, EG
SMITH, RC
SHUBIN, LD
PIEDMONT, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3407 - &
[3] THE EFFECT OF VACUUM-EVAPORATION PARAMETERS ON THE STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF THIN GERMANIUM FILMS
DAVEY, JE
TIERNAN, RJ
PANKEY, T
MONTGOMERY, MD
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 205 - &
[4] SOURCE CONTAMINATION EFFECTS ON EPITAXY OF GE FILMS ON GE
DAVEY, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1965, 2 (01): : 12 - &
[5] HOFFMAN RW, 1954, P PHYS SOC LONDON, VB 67, P497
[6] ROLE OF SURFACE STATES IN CONTRIBUTING TO P-TYPE CARRIER CONCENTRATION OF VACUUM DEPOSITED THIN GERMANIUM FILMS
HUMPHRIS, RR
CATLIN, A
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 957 - &
[7] KUROV GA, 1957, KRISTALLOGRAFIYA, V2, P59
[8] MATARE HF, 1960, SOLID STATE PHYSIC 1, V1, P73
[9] ANALYSIS OF THIN-FILM GERMANIUM EPITAXIALLY DEPOSITED ONTO CALCIUM FLOURIDE
PUNDSACK, AL
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2306 - &
[10] SLOOPE BW, 10 T NAT VAC SOC S, P339