GROWTH OF ZNSXSE1-X CRYSTALS FROM ZNSE-SB2S3-SB2SE3 SOLUTIONS

被引：1

作者：

ARAKI, H ^{[1
]}

KANIE, H ^{[1
]}

SANO, M ^{[1
]}

机构：

[1] SCI UNIV TOKYO, FAC ENGN, DEPT ELECT ENGN, SHINJUKU KU, TOKYO 162, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 1A期

关键词：

ZNSXSE1-X; MIXED CRYSTAL; SOLUTION GROWTH; CHALCOGENIDE; ZINCBLENDE; LOWEST GAP; LUMINESCENCE;

D O I：

10.1143/JJAP.33.235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSxSe1-x crystals were grown in ampoules from ZnSe-Sb2S3-Sb2Se3 solutions, cooling from 1000 degrees C to 700 degrees C at a rate of 9 degrees C/h. All grown crystals had zincblende structure. The sulfur composition x was varied from 0 to 0.99 by changing the sulfur fraction [S]/([S]+[Se]) in the starting material. The value of x was larger than the sulfur fraction in the starting material. The amount of Sb in all the grown crystals was undetectable (< 0.01 at.%). The sulfur composition dependence of the lowest gap determined from a photoluminescence excitation spectrum was represented as E(0)(x) = 2.82 + 0.35x + 0.63x(2) (eV) at 4.2 K. The energy of the peak position in a cathodoluminescence spectrum at room temperature was close to the energy of the lowest gap throughout the entire composition range.

引用

页码：235 / 239

页数：5

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