PHOTOLUMINESCENCE IN ZNSE-TE PREPARED BY SOLUTION GROWTH

被引：5

作者：

ARAKI, H ^{[1
]}

KANIE, H ^{[1
]}

YOSHIDA, I ^{[1
]}

SANO, M ^{[1
]}

AOKI, M ^{[1
]}

机构：

[1] SCI UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,SHINJUKU KU,TOKYO 162,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9A期

关键词：

ZNSE-TE; SOLUTION GROWTH; PHOTOLUMINESCENCE; BOUND EXCITON; ISOELECTRONIC CENTER;

D O I：

10.1143/JJAP.30.1919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe:Te crystals with different Te concentrations were grown from solution using Sb2Se3-SbTe3 and Se-Te as solvents, and their photoluminescence properties were investigated. The emission in the ZnSe:Te samples was composed of three bands located at 2.70 eV (T(A)), 2.50 eV (T(B)) and 2.35 eV (T(C)), the relative intensities of which depended on the sample temperature. The energy position of all three bands was independent of the Te concentration. For the Te concentrations of 0.02%, 1.96% and 9.4%, the dominant band was the T(A) band, the T(B) band and the T(C) band, respectively. We attributed the T(A) band to the emission of excitons bound to the nearest-neighbor Te-Te pairs (Te2). The T(B) band was tentatively attributed to excitons bound to the Te3 centers, and the T(C) band to the Te(n) centers (n greater-than-or-equal-to 3).

引用

页码：1919 / 1923

页数：5

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