ISOELECTRONIC IMPURITY TE IN CDS1-XSEX MIXED-CRYSTALS

被引：24

作者：

GOEDE, O

HEIMBRODT, W

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1982年 / 110卷 / 01期

关键词：

D O I：

10.1002/pssb.2221100119

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：175 / 182

页数：8

共 14 条

[1]

Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4

[2] ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF HEXAGONAL CDSE CDS AND ZNS [J].

BERGSTRESSER, TK ;

COHEN, ML .

PHYSICAL REVIEW, 1967, 164 (03) :1069-+

[3] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].

CUTHBERT, JD ;

THOMAS, DG .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&

[4] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1968, 175 (03) :991-&

[5] 2 TYPES OF LUMINESCENCE TRANSITIONS IN CDS INVOLVING TE ISOELECTRONIC TRAPS [J].

FUKUSHIMA, T ;

SHIONOYA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :813-819

[6] CDS1-XTEX AS PERSISTENCE-TYPE SEMICONDUCTOR MIXED-CRYSTALS [J].

GOEDE, O ;

HEIMBRODT, W ;

MULLER, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02) :543-550

[7] TE-CONCENTRATION DEPENDENCE OF EMISSION INTENSITY OF CDS-TE BY RADIOACTIVE-TRACER PROFILE TECHNIQUE [J].

GOEDE, O ;

NEBAUER, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02) :K85-&

[8] DISORDER EFFECTS ON FREE-EXCITONS IN CDS1-XSEX MIXED-CRYSTALS [J].

GOEDE, O ;

HENNIG, D ;

JOHN, L .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02) :671-681

[9]

GOEDE O, UNPUB

[10]

GOEDE O, 1973, PHYS STAT SOL B, V55, P227

← 1 2 →