2 TYPES OF LUMINESCENCE TRANSITIONS IN CDS INVOLVING TE ISOELECTRONIC TRAPS

被引：15

作者：

FUKUSHIMA, T ^{[1
]}

SHIONOYA, S ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 05期

关键词：

D O I：

10.1143/JJAP.15.813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：813 / 819

页数：7

共 19 条

[1] ELECTROLUMINESCENCE IN TELLURIUM-DOPED CADMIUM SULPHIDE [J].

ATEN, AC ;

HAANSTRA, JH .

PHYSICS LETTERS, 1964, 11 (02) :97-98

[2]

ATEN AC, 1965, PHILIPS RES REP, V20, P395

[3]

Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4

[4] BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

HOPFIELD, JJ .

PHYSICAL REVIEW LETTERS, 1972, 28 (03) :171-+

[5] OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].

CUTHBERT, JD ;

THOMAS, DG .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&

[6] ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 185 (03) :1064-&

[7] INTERIMPURITY RECOMBINATIONS INVOLVING ISOELECTRONIC TRAP BISMUTH IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

CUTHBERT, JD ;

LYNCH, RT .

PHYSICAL REVIEW, 1969, 179 (03) :754-&

[8]

FUKUSHIM.T, 1974, J PHYS SOC JPN, V36, P308, DOI 10.1143/JPSJ.36.308

[9] CAPTURE PROCESSES OF EXCITONS AND FREE CARRIERS BY SHALLOW DONOR-ACCEPTOR PAIRS IN CDS [J].

FUKUSHIMA, T ;

SHIONOYA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1975, 38 (03) :797-803

[10] LUMINESCENCE OF BOUND EXCITONS IN TELLURIUM-DOPED ZINC SULFIDE CRYSTALS [J].

FUKUSHIMA, T ;

SHIONOYA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (04) :549-556

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