MICROSTRUCTURE AND RESISTIVITY OF LASER-ANNEALED AU-GE OHMIC CONTACTS ON GAAS

被引：15

作者：

AINA, O ^{[1
]}

CHIANG, SW ^{[1
]}

LIU, YS ^{[1
]}

BACON, F ^{[1
]}

ROSE, K ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,TROY,NY 12180

来源：

关键词：

D O I：

10.1149/1.2127214

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2183 / 2187

页数：5

共 15 条

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VENKATESAN, TNC
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[2] Brice J.C., 1965, GROWTH CRYSTALS MELT
[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
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FANG, YK
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[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
[4] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS
CHRISTOU, A
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 141 - &
[5] ECKHARDT G, 1978 S LAS SOL INT L, P641
[6] GOLD R, 1978 S LAS SOL INT L, P635
[7] LOVELUCK JE, 1977, I PHYS C, V36, pCH8
[8] MAGEE TJ, 1975, PHYS STATUS SOLIDI A, V52, P695
[9] DYNAMIC BEHAVIOR OF MODE-LOCKED ND-YAG LASER ANNEALING IN ION-IMPLANTED SI, GAAS, AND GAP
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GAMO, K
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KAWABE, M
AOYAGI, Y
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 628 - 630
[10] PARKS HG, 1980, THESIS RENSSELAER PO