FINE-STRUCTURE OF E1' PEAK IN GE AND GAAS

被引：8

作者：

PANDEY, KC

PHILLIPS, JC

机构：

[1] COLUMBIA UNIV,DEPT PHYS,NEW YORK,NY 10027

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.9.1560

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1560 / 1563

页数：4

共 18 条

[1]

ASPNES DE, 1973, B AM PHYS SOC, V18, P438

[2] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[3]

CARDONA M, 1969, SOLID STATE PHYS S, V11

[4]

EDEN RC, 1967, THESIS STANFORD U

[5]

Greenaway D.L., 1968, OPTICAL PROPERTIES B

[6]

GUIZZETTI G, TO BE PUBLISHED

[7]

NOSENZO L, 1972, 11 P INT C SEM, P1409

[8] REFLECTION SPECTRUM OF GE IN UV REGION [J].

PAJASOVA, L .

[9] NONLOCAL PSEUDOPOTENTIALS FOR GE AND GAAS [J].

PANDEY, KC ;

PHILLIPS, JC .

PHYSICAL REVIEW B, 1974, 9 (04) :1552-1559

[10] IONICITY OF CHEMICAL BOND IN CRYSTALS [J].

PHILLIPS, JC .