学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
TIME-DEPENDENT CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS
被引:21
作者
:
ALWIN, VC
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, CTR SOLID STATE TECHNOL, MOS DEVICE RES SECT, SOMERVILLE, NJ 08876 USA
ALWIN, VC
NAVON, DH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, CTR SOLID STATE TECHNOL, MOS DEVICE RES SECT, SOMERVILLE, NJ 08876 USA
NAVON, DH
TURGEON, LJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA, CTR SOLID STATE TECHNOL, MOS DEVICE RES SECT, SOMERVILLE, NJ 08876 USA
TURGEON, LJ
机构
:
[1]
RCA, CTR SOLID STATE TECHNOL, MOS DEVICE RES SECT, SOMERVILLE, NJ 08876 USA
[2]
US GEN ACCOUNTING OFF, HOUSTON, TX 77002 USA
[3]
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1977年
/ 24卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1977.19001
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1297 / 1304
页数:8
相关论文
共 41 条
[21]
HIGH INJECTION IN A 2-DIMENSIONAL TRANSISTOR
MANCK, O
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
MANCK, O
HEIMEIER, HH
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
HEIMEIER, HH
ENGL, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
ENGL, WL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(07)
: 403
-
409
[22]
2-DIMENSIONAL COMPUTER-SIMULATION FOR SWITCHING A BIPOLAR-TRANSISTOR OUT OF SATURATION
MANCK, O
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,INST THEORET ELEKTROTECH,AACHEN,FED REP GER
MANCK, O
ENGL, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,INST THEORET ELEKTROTECH,AACHEN,FED REP GER
ENGL, WL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(06)
: 339
-
347
[23]
THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS
MAYCOCK, PD
论文数:
0
引用数:
0
h-index:
0
MAYCOCK, PD
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(03)
: 161
-
&
[24]
FACTORS LIMITING CURRENT GAIN IN POWER TRANSISTORS
MCGRATH, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
MCGRATH, EJ
NAVON, DH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
NAVON, DH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(10)
: 1255
-
1259
[25]
2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
MOCK, MS
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(05)
: 601
-
609
[26]
EFFECT OF NON-UNIFORM EMITTER CURRENT DISTRIBUTION ON POWER TRANSISTOR STABILITY
NAVON, D
论文数:
0
引用数:
0
h-index:
0
NAVON, D
LEE, RE
论文数:
0
引用数:
0
h-index:
0
LEE, RE
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 981
-
&
[27]
NAVON D, 1973, DAAB0771C0260 CONTR
[28]
NUMERICAL METHOD FOR SOLUTION OF TRANSIENT BEHAVIOR OF BIPOLAR SEMICONDUCTOR DEVICES
PETERSEN, OG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS INC,READING,PA 19604
PETERSEN, OG
RIKOSKI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS INC,READING,PA 19604
RIKOSKI, RA
COWLES, WW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS INC,READING,PA 19604
COWLES, WW
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(02)
: 239
-
251
[29]
2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS
REISER, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,ZURICH RES LAB,RUSCHLIKON 8803,SWITZERLAND
IBM CORP,ZURICH RES LAB,RUSCHLIKON 8803,SWITZERLAND
REISER, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(01)
: 35
-
45
[30]
DIFFERENCE METHODS FOR SOLUTION OF TIME-DEPENDENT SEMICONDUCTOR FLOW EQUATIONS
REISER, M
论文数:
0
引用数:
0
h-index:
0
REISER, M
[J].
ELECTRONICS LETTERS,
1971,
7
(12)
: 353
-
&
←
1
2
3
4
5
→
共 41 条
[21]
HIGH INJECTION IN A 2-DIMENSIONAL TRANSISTOR
MANCK, O
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
MANCK, O
HEIMEIER, HH
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
HEIMEIER, HH
ENGL, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
TH AACHEN, INST THEORET ELEKTROTECH, AACHEN, WEST GERMANY
ENGL, WL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1974,
ED21
(07)
: 403
-
409
[22]
2-DIMENSIONAL COMPUTER-SIMULATION FOR SWITCHING A BIPOLAR-TRANSISTOR OUT OF SATURATION
MANCK, O
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,INST THEORET ELEKTROTECH,AACHEN,FED REP GER
MANCK, O
ENGL, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,INST THEORET ELEKTROTECH,AACHEN,FED REP GER
ENGL, WL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(06)
: 339
-
347
[23]
THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS
MAYCOCK, PD
论文数:
0
引用数:
0
h-index:
0
MAYCOCK, PD
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(03)
: 161
-
&
[24]
FACTORS LIMITING CURRENT GAIN IN POWER TRANSISTORS
MCGRATH, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
MCGRATH, EJ
NAVON, DH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01002 USA
NAVON, DH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(10)
: 1255
-
1259
[25]
2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
MOCK, MS
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(05)
: 601
-
609
[26]
EFFECT OF NON-UNIFORM EMITTER CURRENT DISTRIBUTION ON POWER TRANSISTOR STABILITY
NAVON, D
论文数:
0
引用数:
0
h-index:
0
NAVON, D
LEE, RE
论文数:
0
引用数:
0
h-index:
0
LEE, RE
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 981
-
&
[27]
NAVON D, 1973, DAAB0771C0260 CONTR
[28]
NUMERICAL METHOD FOR SOLUTION OF TRANSIENT BEHAVIOR OF BIPOLAR SEMICONDUCTOR DEVICES
PETERSEN, OG
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS INC,READING,PA 19604
PETERSEN, OG
RIKOSKI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS INC,READING,PA 19604
RIKOSKI, RA
COWLES, WW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TELE LABS INC,READING,PA 19604
COWLES, WW
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(02)
: 239
-
251
[29]
2-DIMENSIONAL NUMERICAL FET MODEL FOR DC, AC, AND LARGE-SIGNAL ANALYSIS
REISER, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,ZURICH RES LAB,RUSCHLIKON 8803,SWITZERLAND
IBM CORP,ZURICH RES LAB,RUSCHLIKON 8803,SWITZERLAND
REISER, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(01)
: 35
-
45
[30]
DIFFERENCE METHODS FOR SOLUTION OF TIME-DEPENDENT SEMICONDUCTOR FLOW EQUATIONS
REISER, M
论文数:
0
引用数:
0
h-index:
0
REISER, M
[J].
ELECTRONICS LETTERS,
1971,
7
(12)
: 353
-
&
←
1
2
3
4
5
→