EPITAXIAL REGROWTH OF EVAPORATED AMORPHOUS SILICON BY A PULSED LASER-BEAM

3000-Å-thick epitaxial layers of 〈100〉 and 〈111〉 silicon have been grown using a Q-switched ruby laser. The initial amorphous silicon layers were formed by e-gun evaporation of high-purity silicon. Using Rutherford backscattering it was established that the crystal quality of the regrown 〈100〉 Si is much better than the 〈111〉 Si, similar to thermal annealing.