CHEMICAL THERMODYNAMICS FOR OPTIMIZATION OF EPITAXIAL FILM DEPOSITION PROCESSES

被引:10
作者
KUZNETSOV, FA [1 ]
机构
[1] ACAD SCI USSR, INST INORG CHEM, NOVOSIBIRSK, USSR
关键词
D O I
10.1016/0040-6090(72)90300-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:303 / 312
页数:10
相关论文
共 21 条
[1]  
Alcock C. B., 1967, T I MM, V76, pC246
[2]  
ARIZUMI T, 1964, JPN J APPL PHYS, V3, P87
[3]   THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J].
BOUCHER, A ;
HOLLAN, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :932-&
[4]   THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].
FERGUSSON, RR ;
GABOR, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592
[5]  
HURLE DTJ, 1967, CRYST GROWTH, P241
[6]  
Jeffes J. H. E., 1968, Journal of Crystal Growth, V3-4Spe, P13, DOI 10.1016/0022-0248(68)90098-5
[7]  
KOKOVIN GA, 1968, 2 P C GALL ARS, P27
[8]  
KOKOVIN GA, 1968, GROWTH PROCESSES STR, P106
[9]  
KUZNETSOV FA, 1971, P SIB BRANCH ACAD CN, V12, P65
[10]  
KUZNETSOV FA, 1970, GROWTH PROCESSES SEM, P73