ELECTRICAL TRANSPORT AND DEFECT LEVELS IN ZNTE CRYSTALS

被引：18

作者：

LARSEN, TL ^{[1
]}

STEVENSON, DA ^{[1
]}

机构：

[1] STANFORD UNIV, DEPT MAT SCI & ENGN, STANFORD, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 847

页数：5

共 30 条

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