TEMPERATURE-DEPENDENCE OF MOBILITY AND HALL-COEFFICIENT FACTOR FOR HOLES OF HIGHLY PURE SILICON

被引：16

作者：

TAKEDA, K

SAKUI, K

SAKATA, M

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 04期

关键词：

D O I：

10.1088/0022-3719/15/4/022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：767 / 776

页数：10

共 18 条

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