ALLOYED EPITAXIAL HETEROJUNCTIONS BETWEEN N-INSB AND P-CDTE

被引:6
作者
MLADEV, L
KAMADIEV, P
PANTELEEVA, L
机构
[1] Institute of Physics, Bulgarian Academy of Sciences, Sofia
来源
PHYSICA STATUS SOLIDI | 1969年 / 35卷 / 01期
关键词
D O I
10.1002/pssb.19690350160
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
[No abstract available]
引用
收藏
页码:K9 / +
页数:1
相关论文
共 5 条
[1]   CROISSANCE EPITAXIQUE DE COMPOSES SEMICONDUCTEURS PAR EVAPORATION-DIFFUSION EN REGIME ISOTHERME [J].
COHENSOL.G ;
MARFAING, Y ;
BAILLY, F .
REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (01) :11-&
[2]   INVERSION OF (111) SURFACES IN SINGLE-CRYSTAL REGROWTH DURING INTERFACE-ALLOYING OF INTERMETALLIC COMPOUNDS ) DIATOMIC LAYER INVERSION DURING REGROWTH E ) [J].
HINKLEY, ED ;
LAVINE, MC ;
REDIKER, RH .
APPLIED PHYSICS LETTERS, 1964, 5 (05) :110-&
[3]   PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS [J].
LOPEZ, A ;
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1964, 7 (09) :695-700
[4]  
NOVIKOVA, 1960, FIZ TVERD TELA, V2, P9
[5]   INTERFACE-ALLOY EPITAXIAL HETEROJUNCTIONS [J].
REDIKER, RH ;
STOPEK, S ;
WARD, JHR .
SOLID-STATE ELECTRONICS, 1964, 7 (08) :621-&