PHOTOCURRENT SPECTRA OF GE-GAAS HETERO-JUNCTIONS

被引：28

作者：

LOPEZ, A

ANDERSON, RL

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 09期

关键词：

D O I：

10.1016/0038-1101(64)90056-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：695 / 700

页数：6

共 12 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].

ANDERSON, RL .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :283-287

[3]

ANDERSON RL, 1960, P INT C SEMICONDUCTO

[4] CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS [J].

CUSANO, DA .

SOLID-STATE ELECTRONICS, 1963, 6 (03) :217-232

[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].

DASH, WC ;

NEWMAN, R .

PHYSICAL REVIEW, 1955, 99 (04) :1151-1155

[6]

FANG FF, 1963, P IEEE, V51, P860

[7] TUNNEL DIODES BY VAPOR GROWTH OF GE ON GE AND ON GAAS [J].

MARINACE, JC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :280-282

[8] INFRARED ABSORPTION IN GALLIUM ARSENIDE [J].

MOSS, TS ;

HAWKINS, TDF .

INFRARED PHYSICS, 1961, 1 (02) :111-115

[9] PHONON AND POLARON INTERACTION IN GERMANIUM-GALLIUM ARSENIDE TUNNEL HETEROJUNCTIONS [J].

NATHAN, MI ;

MARINACE, JC .

PHYSICAL REVIEW, 1962, 128 (05) :2149-+

[10] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :121-132

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