SYNCHROTRON-RADIATION-INDUCED DEPOSITION OF BORON AND BORON-CARBIDE FILMS FROM BORANES AND CARBORANES - DECABORANE

被引：50

作者：

PERKINS, FK

ROSENBERG, RA

LEE, SW

DOWBEN, PA

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

[2] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.348422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron has been deposited successfully on Si(111) from the synchrotron-radiation-induced decomposition of decaborane (14), i.e., B10H14. The rate of deposition is limited by the adsorption rate of decaborane (14) on the surface. In addition there is some indication that there is an activation barrier to dissociative adsorption. The synchrotron-radiation-induced growth rate of boron thin films from decaborane (14) is linear with coverage for a large range of thickness, suggesting a constant sticking coefficient for decaborane adsorption at room temperature.

引用

页码：4103 / 4109

页数：7

共 62 条

[1]

AVOIRIS P, 1990, J VAC SCI TECHNOL A, V8, P3405

[2] ATOM-RESOLVED SURFACE-CHEMISTRY USING THE SCANNING TUNNELING MICROSCOPE [J].