INFLUENCE OF BORON DOPING ON THE TRANSPORT-PROPERTIES OF A-SI-H FILMS

被引：14

作者：

BEYER, W ^{[1
]}

MELL, H ^{[1
]}

机构：

[1] UNIV MARBURG, FACHBEREICH PHYS, D-3550 MARBURG, FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 38卷 / 10期

关键词：

D O I：

10.1016/0038-1098(81)90770-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：891 / 894

页数：4

共 16 条

[1]

ANDERSON DA, 1977, 7TH P INT C AM LIQ S, P334

[2]

Beyer W., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P251

[3] TRANSPORT PROPERTIES OF DOPED AMORPHOUS SILICON [J].

BEYER, W ;

OVERHOF, H .

SOLID STATE COMMUNICATIONS, 1979, 31 (01) :1-4

[4] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON [J].

BEYER, W ;

FISCHER, R ;

OVERHOF, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :205-217

[5]

BEYER W, UNPUBLISHED

[6]

BRODSKY MH, SOLID STATE COMM

[7] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[8] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J].

DANTONIO, P ;

KONNERT, JH .

PHYSICAL REVIEW LETTERS, 1979, 43 (16) :1161-1163

[9] CONDUCTIVITY, THERMOPOWER, AND STATISTICAL SHIFT IN AMORPHOUS-SEMICONDUCTORS [J].

DOHLER, GH .

PHYSICAL REVIEW B, 1979, 19 (04) :2083-2091

[10] HOPPING MODEL FOR ACTIVATED CHARGE TRANSPORT IN AMORPHOUS SILICON [J].

GRUNEWALD, M ;

THOMAS, P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :125-133

← 1 2 →