TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON

被引:60
作者
BEYER, W [1 ]
FISCHER, R [1 ]
OVERHOF, H [1 ]
机构
[1] TECH UNIV BERLIN,INST THEORET PHYS,D-1000 BERLIN 12,FED REP GER
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 03期
关键词
D O I
10.1080/13642817908245357
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Conductivity 〈σ) and thermopower (S) data are presented for an amorphous Si film prepared by the glow-discharge technique and doped step-by-step by implantation of 20 keV Li ions. The results are similar to those obtained by doping with phosphorus from the gas phase. By an analysis of ln σ + {eS/k} it is shown that for all doping steps the transport mechanism does not change with temperature. Thus, there is no indication of two-channel transport via localized and extended states. The mobility is found to be activated with an activation energy varying from 0·1 to 0·2 eV depending on the doping rate, while the prefactor of the conductivity is rather insensitive to doping. It is shown that the statistical shift of the Fermi level must be quite large at medium and high doping levels in order to account for the experimental data. © 1979 Taylor & Francis Ltd.
引用
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页码:205 / 217
页数:13
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