MICROWAVE MEASUREMENT OF HALL MOBILITY - EXPERIMENTAL METHOD

被引：20

作者：

NISHINA, Y

DANIELSON, GC

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1961年 / 32卷 / 07期

关键词：

D O I：

10.1063/1.1717509

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：790 / &

共 10 条

[1] HALL AND KERR EFFECTS AT MICROWAVE FREQUENCIES [J].

COOKE, SP .

PHYSICAL REVIEW, 1948, 74 (06) :701-702

[2]

FURDYNA JK, 1959, B AM PHYS SOC, V4, P410

[3] MICROWAVE HALL EFFECT IN GERMANIUM AND SILICON AT 20 KMC-S [J].

HAMBLETON, GE ;

GARTNER, WW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :329-332

[4] MICROWAVE MEASUREMENT OF MOBILITY - ANALYSIS OF APPARATUS [J].

LIU, SH ;

GOOD, RH ;

NISHINA, Y .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (07) :784-&

[5] MEASUREMENT OF THE HALL MOBILITY IN N-TYPE GERMANIUM AT 9121-MEGACYCLES [J].

NISHINA, Y ;

SPRY, WJ .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (02) :230-231

[6]

NISHINA Y, 1960, DISSERTATION

[7]

RAU R, 1955, PHYS REV, V106, P632

[8]

WATANABE N, 1959, BULL PHYS SOC JAPAN3, P218

[9] TRANSVERSE HALL AND MAGNETORESISTANCE EFFECTS IN P-TYPE GERMANIUM [J].

WILLARDSON, RK ;

HARMAN, TC ;

BEER, AC .

PHYSICAL REVIEW, 1954, 96 (06) :1512-1518

[10]

YAMAGATA K, 1960, SCI REP RES INS TOH, VA12, P247

← 1 →