DUAL-POLARIZATION, SINGLE-QUANTUM-WELL ALGAINP LASER-DIODE STRUCTURE

被引:11
作者
BOUR, DP
BEERNINK, KJ
TREAT, DW
PAOLI, TL
THORNTON, RL
机构
[1] Electronic Materials Laboratory, XEROX Palo Alto Research Center, Palo Alto
关键词
D O I
10.1109/3.362738
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A single quantum-well Ga0.5+deltaIn0.5-deltaP/(AlGa)(0.5)In0.5P laser structure is demonstrated, which can provide similar gain in both polarizations, The slightly tensile-strained quantum-well has a light-hole ground state, which gives the lowest transparency current for TM-mode gain, However, the TE-mode gain is dominant at high drive currents, The gain-current relationships have been characterized for each polarization, and found to cross at a modal gain value of 25 cm(-1). Lasers whose threshold gain is near this crossover value were found to emit in either one or both polarizations, with a very wide range of polarization asymmetry possible, A simple QW gain model can be used to qualitatively describe this behavior, along with the tendency toward TE-mode emission at higher temperature.
引用
收藏
页码:2738 / 2742
页数:5
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