POLARIZATION INSENSITIVE SEMICONDUCTOR-LASER AMPLIFIERS WITH TENSILE STRAINED INGAASP/INGAASP MULTIPLE QUANTUM-WELL STRUCTURE

被引：48

作者：

JOMA, M

HORIKAWA, H

XU, CQ

YAMADA, K

KATOH, Y

KAMIJOH, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co. Ltd., Hachioji, Tokyo 193

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.109344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data on semiconductor laser amplifiers with a small tensile strain in the wells of multiple quantum well structures are presented. Semiconductor amplifiers with a small strain of 0.2% exhibit polarization insensitive characteristics with a signal gain of 15 dB in the 1.5 mum wavelength range. The enhancement of TM mode gain due to tensile strain is studied by measuring the dependence of amplified spontaneous emission spectra on device length and tensile strain.

引用

页码：121 / 122

页数：2

共 8 条

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[6] 1.55 MU-M POLARIZATION-INSENSITIVE HIGH-GAIN TENSILE-STRAINED-BARRIER MQW OPTICAL AMPLIFIER
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[8] GAIN SPECTRA AND GAIN COMPRESSION OF STRAINED-LAYER MULTIPLE QUANTUM-WELL OPTICAL AMPLIFIERS
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[J]. APPLIED PHYSICS LETTERS, 1991, 58 (03) : 219 - 221

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