1.55 MU-M POLARIZATION-INSENSITIVE HIGH-GAIN TENSILE-STRAINED-BARRIER MQW OPTICAL AMPLIFIER

被引：61

作者：

MAGARI, K

OKAMOTO, M

NOGUCHI, Y

机构：

[1] Opto-electronics Laboratories, Kanagawa

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 11期

关键词：

D O I：

10.1109/68.97840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polarization insensitive semiconductor optical amplifier was realized at a wavelength of 1.55-mu-m. The active layer consisted of a tensile-strained-barrier MQW structure. A signal gain of 27.5 dB and a saturation output power of 14 dBm were obtained together.

引用

页码：998 / 1000

页数：3

共 8 条

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