POLARIZATION INSENSITIVE TRAVELING-WAVE TYPE AMPLIFIER USING STRAINED MULTIPLE QUANTUM-WELL STRUCTURE

被引：50

作者：

MAGARI, K

OKAMOTO, M

YASAKA, H

SATO, K

NOGUCHI, Y

MIKAMI, O

机构：

[1] NTT-Electronics Laboratories

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 08期

关键词：

D O I：

10.1109/68.58047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Signal gain agreement between TE and TM modes is realized under a specific operation condition in a traveling wave type amplifier using a strained multiple quantum well structure for the first time. © 1990 IEEE

引用

页码：556 / 558

页数：3

共 8 条

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[3] POLARIZATION-INSENSITIVE, NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS AT 1.5-MU-M
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[4] LARGE-SIGNAL AND SMALL-SIGNAL GAIN CHARACTERISTICS OF 1.5-MU-M MULTIPLE QUANTUM-WELL OPTICAL AMPLIFIERS
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[J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1201 - 1203
[5] GROSSKOPF G, 1987, ELECTRON LETT, V23, P1387, DOI 10.1049/el:19870957
[6] MAGARI K, 3RD OPT C OEC 89
[7] OLSSON NA, 1990, ELECTRON LETT, V25, P1049
[8] BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS
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