HIGH-POWER 1.48 MU-M MULTIPLE QUANTUM-WELL LASERS WITH STRAINED QUATERNARY WELLS ENTIRELY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

This letter describes 1.48-mu-m multiple quantum well (MQW) lasers with strained GaInAsP quaternary wells entirely grown by metalorgainic vapor phase epitaxy. The GaInAsP quaternary layers with 1.5% biaxially compressed strain showed an excellent crystal quality and an abrupt interface within half-monolayer fluctuations which was verified with photoluminescence spectroscopy. The maximum continuous wave output power of 140 mW was obtained at 20-degrees-C with 1500-mu-m-long lasers whose facets were coated by anti- and high-reflection films. The small internal loss of 12 cm-1 and a high internal efficiency of 70% were obtained.