HIGH-QUALITY INGAASP-INP FOR MULTIPLE QUANTUM WELL LASER-DIODES GROWN BY LOW-PRESSURE OMVPE

被引：12

作者：

THIJS, PJA ^{[1
]}

VANDONGEN, T ^{[1
]}

KUINDERSMA, PI ^{[1
]}

BINSMA, JJM ^{[1
]}

TIEMEYER, LF ^{[1
]}

LAGEMAAT, JM ^{[1
]}

MORONI, D ^{[1
]}

NIJMAN, W ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94451 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Double Channel Planar Buried Heterostructure - Multiple Quantum Well Laser Diodes - Organometallic Vapor Phase Epitaxy;

D O I：

10.1016/0022-0248(88)90632-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(Edited Abstract)

引用

页码：863 / 869

页数：7

共 12 条

[1] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].

BARTELS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345

[2] UNAMBIGUOUS OBSERVATION OF THE 2S STATE OF THE LIGHT-HOLE AND HEAVY-HOLE EXCITONS IN GAAS-(ALGA) AS MULTIPLE-QUANTUM-WELL STRUCTURES [J].

DAWSON, P ;

MOORE, KJ ;

DUGGAN, G ;

RALPH, HI ;

FOXON, CTB .

PHYSICAL REVIEW B, 1986, 34 (08) :6007-6010

[3] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

PANISH, MB ;

TEMKIN, H ;

HAMM, RA ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :164-166

[4]

PEARSALL TP, 1982, GAINASP ALLOY SEMICO, P456

[5] RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J].

RAZEGHI, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :145-149

[6] SIMPLE CALCULATIONS OF CONFINEMENT STATES IN A QUANTUM WELL [J].

SCHUURMANS, MFH ;

THOOFT, GW .

PHYSICAL REVIEW B, 1985, 31 (12) :8041-8048

[7] HIGH MOBILITY TWO-DIMENSIONAL ELECTRON-GAS IN INP/GA0.47IN0.53AS HETEROJUNCTIONS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

THIJS, PJA ;

LAGEMAAT, JM ;

WOLTJER, R .

ELECTRONICS LETTERS, 1988, 24 (04) :226-227

[8]

THIJS PJA, 1987, P EUROPEAN C OPTICAL, V3, P13

[9]

THIJS PJA, IN PRESS APPL PHYS L

[10] GROWTH OF HIGH-QUALITY GAXIN1-XASYP1-Y BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

SCHUBERT, EF ;

CHIU, TH ;

CUNNINGHAM, JE ;

BURKHARDT, EG ;

DITZENBERGER, JA ;

AGYEKUM, E .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :761-763

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