HIGH MOBILITY TWO-DIMENSIONAL ELECTRON-GAS IN INP/GA0.47IN0.53AS HETEROJUNCTIONS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：10

作者：

THIJS, PJA

LAGEMAAT, JM

WOLTJER, R

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 04期

关键词：

CRYSTALS - Epitaxial Growth - HALL EFFECT;

D O I：

10.1049/el:19880151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The two-dimensional electron gas in InP/GaInAs heterojunctions, grown by LP-OMVPE, showed Hall mobilities as high as 164 000 and 103 000 cm**2/Vs at 4K and 80 K, respectively. A maximum Hall mobility of 172 000 cm**2/Vs was measured at 20 K. Shubnikov-de Haas oscillations measured at 200 mK in magnetic fields up to 20 T indicated the total absence of parallel conduction. By illuminating the sample it was possible to populate the second electrical sub-band at a total carrier density n//s equals 4. 4 multiplied by 10**1**1 cm** minus **2.

引用

页码：226 / 227

页数：2

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