HIGH-FIELD ELECTRON-TRANSPORT IN N-INP/GAINAS TWO-DIMENSIONAL ELECTRON-GAS

被引：19

作者：

TSUBAKI, K

FUKUI, T

SAITO, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：875 / 877

页数：3

共 12 条

[1]

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[2]

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[8]

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[9] SELECTIVELY DOPED N+ INP/N- GAINAS HETEROSTRUCTURE PREPARED USING CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

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[10] DIFFERENTIAL NEGATIVE-RESISTANCE CAUSED BY INTER-SUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

TSUBAKI, K ;

LIVINGSTONE, A ;

KAWASHIMA, M ;

OKAMOTO, H ;

KUMABE, K .

SOLID STATE COMMUNICATIONS, 1983, 46 (07) :517-520

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