DIFFERENTIAL NEGATIVE-RESISTANCE CAUSED BY INTER-SUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-GAS

被引：27

作者：

TSUBAKI, K

LIVINGSTONE, A

KAWASHIMA, M

OKAMOTO, H

KUMABE, K

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 46卷 / 07期

关键词：

D O I：

10.1016/0038-1098(83)90681-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：517 / 520

页数：4

共 19 条

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[2] FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS [J].

DRUMMOND, TJ ;

KEEVER, M ;

KOPP, W ;

MORKOC, H ;

HESS, K ;

STREETMAN, BG ;

CHO, AY .

ELECTRONICS LETTERS, 1981, 17 (15) :545-547

[3] MONTE-CARLO SIMULATION OF REAL-SPACE ELECTRON-TRANSFER IN GAAS-ALGAAS HETEROSTRUCTURES [J].

GLISSON, TH ;

HAUSER, JR ;

LITTLEJOHN, MA ;

HESS, K ;

STREETMAN, BG ;

SHICHIJO, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5445-5449

[4] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES [J].

HIYAMIZU, S ;

NANBU, K ;

MIMURA, T ;

FUJII, T ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L378-L380

[5]

INOUE M, 1981, J PHYS C SOLID STATE, V7, P19

[6] DIFFERENTIAL NEGATIVE-RESISTANCE OF N-TYPE INVERSION LAYER IN SILICON MOS FIELD-EFFECT TRANSISTOR [J].

KATAYAMA, Y ;

YOSHIDA, I ;

KOMATSUBARA, KF ;

KOTERA, N .

APPLIED PHYSICS LETTERS, 1972, 20 (01) :31-+

[7] CURRENT TRANSPORT IN MODULATION-DOPED ALXGA1-XAS/GAAS HETEROJUNCTION STRUCTURES AT MODERATE FIELD STRENGTHS [J].

KEEVER, M ;

KOPP, W ;

DRUMMOND, TJ ;

MORKOC, H ;

HESS, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10) :1489-1495

[8] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[9] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE [J].

MORI, S ;

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) :865-873

[10] NEGATIVE DIFFERENTIAL RESISTANCE IN (100)NORMAL-CHANNEL SILICON INVERSION LAYERS [J].

NEUGEBAUER, T ;

LANDWEHR, G ;

HESS, K .

SURFACE SCIENCE, 1978, 73 (01) :163-165

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