CURRENT TRANSPORT IN MODULATION-DOPED ALXGA1-XAS/GAAS HETEROJUNCTION STRUCTURES AT MODERATE FIELD STRENGTHS

被引：26

作者：

KEEVER, M ^{[1
]}

KOPP, W ^{[1
]}

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 10期

关键词：

D O I：

10.1143/JJAP.21.1489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1489 / 1495

页数：7

共 15 条

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[2] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
DRUMMOND, TJ
MORKOC, H
HESS, K
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5231 - 5234
[3] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[4] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[5] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257
[6] JAROS M, COMMUNICATION
[7] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE
MORI, S
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) : 865 - 873
[8] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET)
MORKOC, H
BANDY, SG
SANKARAN, R
ANTYPAS, GA
BELL, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 619 - 627
[9] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .2. SCREENING
PRICE, PJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 599 - 603
[10] RIDLEY BK, UNPUB PHYS REV

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