HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS

被引：59

作者：

HESS, K

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1254 / 1257

页数：4

共 17 条

[1]

CONWELL EM, 1967, SOLID STATE PHYSI S9

[2] ELECTRON-ENERGY RELAXATION-TIME IN SI AND GE [J].

COSTATO, M ;

FONTANESI, S ;

REGGIANI, L .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) :547-564

[3] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].

FANG, FF ;

FOWLER, AB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5] GALVANOMAGNETIC EFFECTS OF HOT ELECTRONS IN N-TYPE SILICON [J].

HEINRICH, H ;

KRIECHBAUM, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (05) :927-+

[6] HOT-ELECTRON-PHONON INTERACTION IN NONPARABOLIC CONDUCTION-BAND OF DEGENERATE INSB AT 4.2 K [J].

KAHLERT, H ;

BAUER, G .

PHYSICAL REVIEW B, 1973, 7 (06) :2670-2682

[7]

LAX, 1972, PHYS STATUS SOLIDI B, V49, pK153

[8] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J].

LONG, D .

PHYSICAL REVIEW, 1960, 120 (06) :2024-2032

[9] THEORY OF SCATTERING OF ELECTRONS IN A "NONDEGENERATE-SEMICONDUCTOR-SURFACE INVERSION LAYER BY SURFACE-OXIDE CHARGES [J].

NING, TH ;

SAH, CT .

PHYSICAL REVIEW B, 1972, 6 (12) :4605-4613

[10]

NORTON PR, TO BE PUBLISHED

← 1 2 →