NEGATIVE DIFFERENTIAL RESISTANCE IN (100)NORMAL-CHANNEL SILICON INVERSION LAYERS

被引：3

作者：

NEUGEBAUER, T

LANDWEHR, G

HESS, K

机构：

[1] UNIV VIENNA,LUDWIG BOLTZMANN INST FESTKORPERPHYS,A-1090 VIENNA,AUSTRIA

[2] UNIV VIENNA,INST ANGEW PHYS,A-1090 VIENNA,AUSTRIA

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90485-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：163 / 165

页数：3

共 17 条

[1]

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[8] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS [J].

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[9] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J].

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[10] DIFFERENTIAL NEGATIVE-RESISTANCE OF N-TYPE INVERSION LAYER IN SILICON MOS FIELD-EFFECT TRANSISTOR [J].

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APPLIED PHYSICS LETTERS, 1972, 20 (01) :31-+

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