NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES

被引：25

作者：

HESS, K

NEUGROSCHEL, A

SHIUE, CC

SAH, CT

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 04期

关键词：

D O I：

10.1063/1.321775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1721 / 1727

页数：7

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