WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS

被引：58

作者：

HESS, K

SAH, CT

机构：

[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL USA

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.10.3375

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3375 / 3386

页数：12

共 26 条

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