HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS

被引：57

作者：

FERRY, DK ^{[1
]}

机构：

[1] USN,OFF NAVAL RES,ARLINGTON,VA 22217

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.14.5364

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5364 / 5371

页数：8

共 25 条

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[9] OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS [J].

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[10] MEASUREMENT OF BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY IN N - TYPE SILICON [J].

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