OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS

被引：64

作者：

FERRY, DK ^{[1
]}

机构：

[1] USN,OFF NAVAL RES,PROGRAM ELECTR & SOLID STATE SCI,ARLINGTON,VA 22217

来源：

SURFACE SCIENCE | 1976年 / 57卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90178-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：218 / 228

页数：11

相关论文

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[5] ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS
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[J]. SURFACE SCIENCE, 1971, 24 (02) : 659 - &
[6] SURFONS AND ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
EZAWA, H
KAWAJI, S
NAKAMURA, K
[J]. SURFACE SCIENCE, 1971, 27 (01) : 218 - &
[7] EZAWA H, 1975, INT C ELECTRONIC PRO
[8] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
FANG, FF
FOWLER, AB
[J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
[9] FERRY DK, TO BE PUBLISHED
[10] FRANKL DR, 1967, ELECTRICAL PROPERTIE

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