BARRIER CONTROL AND MEASUREMENTS - ABRUPT SEMICONDUCTOR HETEROJUNCTIONS

被引：67

作者：

KROEMER, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / 439

页数：7

共 43 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[3]

[Anonymous], ELECTRONIC STRUCTURE

[4] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :999-1005

[5] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240

[6] SURFACE PROCESSES CONTROLLING MBE HETEROJUNCTION FORMATION - GAAS(100)/GE INTERFACES [J].

BAUER, RS ;

MIKKELSEN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :491-497

[7] INEQUALITY OF SEMICONDUCTOR HETEROJUNCTION CONDUCTION-BAND-EDGE DISCONTINUITY AND ELECTRON-AFFINITY DIFFERENCE [J].

BAUER, RS ;

ZURCHER, P ;

SANG, HW .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :663-665

[8] ELECTRONIC-PROPERTIES OF INAS-GASB SUPER-LATTICES [J].

CHANG, LL ;

ESAKI, L .

SURFACE SCIENCE, 1980, 98 (1-3) :70-89

[9]

COHEN ML, 1980, ADV ELECTRON EL PHYS, V51, P1

[10]

DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

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