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PLANAR P-N JUNCTION GERMANIUM PHOTODIODES FOR USE AT MICROWAVE MODULATION FREQUENCIES

被引：2
作者：
BURRUS, CA
SHARPLESS, WM
机构：
来源：
SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 09期
关键词：
D O I：
10.1016/0038-1101(70)90025-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1283 / +
页数：1
相关论文
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[5]   EVALUATION OF A SPECIALLY DESIGNED GAAS SCHOTTKY-BARRIER PHOTODIODE USING 6328-A RADIATION MODULATED AT 4 GHZ [J].
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[6]  
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