PLANAR DIFFUSED GALLIUM ARSENIDE MILLIMETER-WAVE VARACTOR DIODES

被引：14

作者：

BURRUS, CA

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 06期

关键词：

D O I：

10.1109/PROC.1967.5749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1104 / &

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共 10 条

[1] FORMED-POINT-CONTACT VARACTOR DIODES UTILIZING A THIN EPITAXIAL GALLIUM ARSENDIE LAYER
BURRUS, CA
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (12) : 1777 - &
[2] MILLIMETER-WAVE POINT-CONTACT AND JUNCTION DIODES
BURRUS, CA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (04): : 575 - +
[3] DELOACH BC, 1964, IEEE T MICROW THEORY, VMT12, P15
[4] USE OF LOW-TEMPERATURE DEPOSITED SILICON DIOXIDE FILMS AS DIFFUSION MASKS IN GAAS
ING, SW
DAVERN, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (01) : 120 - 122
[5] A DIFFUSION MASK FOR GERMANIUM
JORDAN, EL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) : 478 - 481
[6] KERWIN RE, PRIVATE COMMUNICATIO
[7] LEE TD, TO BE PUBLISHED
[8] LEE TP, 1965, IEEE T ELECTRON DEV, VED12, P457
[9] GALLIUM ARSENIDE PLANAR TECHNOLOGY
VONMUNCH, W
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (06) : 438 - +
[10] MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE
YOUNG, DT
IRVIN, JC
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2130 - &