USE OF LOW-TEMPERATURE DEPOSITED SILICON DIOXIDE FILMS AS DIFFUSION MASKS IN GAAS

被引：27

作者：

ING, SW

DAVERN, W

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 01期

关键词：

D O I：

10.1149/1.2426047

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：120 / 122

页数：3

相关论文

共 6 条

[1] LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS
ALT, LL
ING, SW
LAENDLE, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 465 - 465
[2] METAL PRECIPITATES IN SILICON P-N JUNCTIONS
GOETZBERGER, A
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824
[3] KRESSEL H, 1962, P IRE, V50, P2493
[4] MINDEN HJ, 1962, J ELECTROCHEM SOC, V8, P733
[5] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[6] SURFACE MASKING IN GALLIUM ARSENIDE DURING DIFFUSION
YEH, TH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 341 - 343