ELECTRONIC-PROPERTIES OF DELTA-DOPED GAAS

被引：15

作者：

GOLD, A

GHAZALI, A

SERRE, J

机构：

[1] UNIV PARIS 06,PHYS SOLIDES GRP,F-75251 PARIS,FRANCE

[2] UNIV PARIS 07,F-75251 PARIS,FRANCE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 07期

关键词：

D O I：

10.1088/0268-1242/7/7/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For temperature zero we study the effects of disorder on the electronic properties of the two-dimensional electron gas which exists in planar-doped (delta-doped) GaAs. The density of states, the Fermi level, the single-particle relaxation time and the electron mobility are calculated as functions of the dopant concentration. The transition from a band tail to an impurity band and the nature of the metal-insulator transition are discussed. We compare our theoretical results on the mobility with some available experimental data.

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页码：972 / 979

页数：8

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